The company has hands-on experience in the circuit design with a wide range of semiconductor technologies, including Si LDMOSFET, BJT, SiGe–HBTs, GaN, and bulk-, SOI-, and FDSOI- CMOS.

The specific technologies and nodes include:

Semiconductor Technology nodes used in IC design works

  • Infineon Technology:
    • 550-300 nm LDMOSFET: several projects for high power IC PA for base station applications mainly in Infineon’s 550-300 nm technology.
  • IBM / GlobalFoundries (GF):
    • 130 nm SiGe technology wa used for 5G mmw application.
    • 90 nm CMOS
    • 45 nm and 22 nm FDSOI, Fully Depleted Silicon-on-Insulator (FDSOI) technologies at 45 nm and 22 nm nodes for high-performance circuit design is used currently (22nm).
  • STMicroelectronics:
    • 65 nm Silicon-on-Insulator (SOI)
    • 28 nm SOI
  • TSMC:
    • 28 nm Bulk CMOS‘
    • 16 nm FinFET, was used for a Bluetooth short range radio project.
  • Legacy Process Nodes:
    • Variety of legacy nodes from Bipolar and CMOS process technologies developed by the former Ericsson Microelectronics, now infineon technologies.

This broad expertise in various semiconductor process technologies enables the company to design highly optimized integrated circuits and power-efficient systems across a wide spectrum of applications, from high-frequency telecommunications to high-power ICs and RF systems. Also the knowledge speed up learning time of gaining knowledge of new process nodes.